This white paper, released by The National Institute of Standards, outlines the importance of nanoelectronics to improve energy efficiency.

ST-MRAM (Spin torque magnetoresistive random access memory) can become a universal memory, replacing semiconductor cache memories, disk storage and even enabling non-volatile processors.

The success of the ST-MRAM project would help to meet the adminstration's goals of improving energy efficiency in the US, according to the report.

NIST intends to extend its support to accelerate the development of advanced non-volatile memory technologies, which is expected to be expensive.