Ideal Power has been granted a patent for a method of operating a bi-directional double-base bipolar junction transistor (B-TRAN) in a power module. The method involves conducting load current, interrupting it with an interrupt signal, and blocking current flow. GlobalData’s report on Ideal Power gives a 360-degree view of the company including its patenting strategy. Buy the report here.
According to GlobalData’s company profile on Ideal Power, Smart energy mgmt systems was a key innovation area identified from patents. Ideal Power's grant share as of February 2024 was 55%. Grant share is based on the ratio of number of grants to total number of patents.
Method of operating a bi-directional double-base bipolar junction transistor
A recently granted patent (Publication Number: US11888030B2) discloses a method for operating a power module equipped with a bi-directional double-base bipolar junction transistor. The method involves conducting load currents through the transistor in both directions, interrupting the load currents using FETs with specific breakdown voltages, and blocking current flow between terminals. The patent also details a switch assembly that includes a controller, FETs, and a transistor, allowing for controlled current flow and interruption based on applied voltages and control signals. The breakdown voltages of the components are specified to ensure safe and efficient operation.
Furthermore, the patent describes a method for operating the bi-directional double-base bipolar junction transistor independently, involving making the transistor conductive and non-conductive by supplying current to specific leads and floating others. The method includes steps for closing and opening electrically-controlled switches to control the flow of current through the transistor. The patent also outlines variations in voltage levels for supplying current to the transistor and specifies the types of transistors suitable for this operation, such as NPN or PNP transistors. Overall, the patent provides detailed insights into the operation and control of power modules and transistors for efficient and reliable performance in various applications.
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