First Solar. has filed a patent for a photovoltaic cell that includes a nitrogen-containing metal layer in contact with a semiconductor layer. The method of manufacturing the cell involves forming semiconductor layers, depositing a nitrogen-containing metal layer, and adding aluminum and chromium layers. GlobalData’s report on First Solar gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on First Solar, Photovoltaic roof tiles was a key innovation area identified from patents. First Solar's grant share as of September 2023 was 38%. Grant share is based on the ratio of number of grants to total number of patents.
Photovoltaic cell with nitrogen-containing metal layer
A recently filed patent (Publication Number: US20230317864A1) describes a method for manufacturing a photovoltaic cell. The method involves several steps to create the cell structure.
In the first claim, the method begins by forming a first semiconductor layer over a substrate, which can be made of CdTe, CdSe, or a mixture of both. A second layer is then formed over the first semiconductor layer, consisting of CdO. Next, a metal layer is deposited over the second layer in the presence of nitrogen, resulting in a nitrogen-containing metal layer. This layer can include various nitrides such as aluminum nitride, molybdenum nitride, nickel nitride, titanium nitride, tungsten nitride, selenium nitride, tantalum nitride, or vanadium nitride. An aluminum layer is then deposited over the nitrogen-containing metal layer, followed by a chromium layer over the aluminum layer.
The second claim adds additional steps to the method. After forming the first semiconductor layer and the second layer, a transparent conductive layer is placed on the substrate. A capping layer is then inserted between the transparent conductive layer and the first semiconductor layer.
The subsequent claims provide further details and variations of the method. For example, claim 3 specifies that the metal layer is deposited in the presence of a nitrogen gas mixture containing 2% to 50% nitrogen. Claim 7 mentions the use of a conveyor system to transport the substrate through a series of deposition stations, with at least one station heated to a temperature range of 450°C to 700°C. Claim 9 introduces a different second semiconductor layer made of Zn, and claim 13 specifies the use of titanium nitride as the nitrogen-containing metal layer.
Overall, this patent describes a method for manufacturing photovoltaic cells using specific semiconductor and metal layers, as well as the presence of nitrogen during deposition. The method also includes variations such as the addition of transparent conductive and capping layers, as well as different semiconductor materials.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
